AMAT Applied Materials 0190-11570射頻匹配器
1.產(chǎn) 品 資 料 介 紹:
- 等離子體刻蝕:適配硅片、化合物半導(dǎo)體的干法刻蝕工藝,保障刻蝕速率與圖形精度的均勻性
- 等離子體增強(qiáng)化學(xué)氣相沉積(PECVD):用于薄膜沉積過(guò)程的功率穩(wěn)定控制,提升膜厚一致性
- 等離子體清洗:在晶圓鍵合前處理中提供穩(wěn)定等離子體源,確保表面清潔效果
- 配套射頻電源:兼容 AMAT 自家 1500W 級(jí)射頻電源(如 0190 系列電源),也可適配安捷倫、康姆艾德等品牌同功率等級(jí)電源
- 主機(jī)設(shè)備適配:廣泛應(yīng)用于 AMAT Centura 刻蝕系統(tǒng)、Endura 沉積平臺(tái)等主力半導(dǎo)體設(shè)備
- 協(xié)同組件:與射頻功率計(jì)、反應(yīng)腔壓力控制器聯(lián)動(dòng),形成閉環(huán)功率控制體系
AMAT Applied Materials 0190-11570射頻匹配器 英文資料:
1、 Product core positioning
AMAT 0190-11570 is an automatic RF matching device specially designed by Applied Materials for semiconductor plasma processes, and belongs to the core regulating component of RF power transmission systems. Its core function is to dynamically match the impedance difference between the RF power supply and the plasma load. By adjusting the internal adjustable capacitor in real time, the reflected power is minimized to ensure efficient and stable transmission of RF energy to the etching or deposition reaction chamber. It is a key equipment to ensure process uniformity and equipment safety.
Compared with traditional manual matchers, this model adopts a high-speed automatic matching algorithm, which can quickly respond to drastic changes in load impedance (such as plasma ignition stage), significantly improving process stability and production efficiency.
2、 Key technical parameters (derived from industry standards and similar products)
Based on the AMAT RF equipment technical specifications and the general parameters of the 13.56MHz frequency band matching device, the core specifications of this model are speculated as follows:
Parameter category
Specification Description
RF core characteristics
Operating frequency 13.56MHz ± 50ppm, power range 50-1500W, target impedance 50 Ω
Matching performance
Matching time<3s (preset point<1s), standing wave ratio<1.2, maximum reflected power<3W or 1% input power
Impedance matching range
Resistance component 0.5-35 Ω, reactance component -112-32 Ω (covering the typical impedance range of semiconductor plasma)
Physical and Environmental Specifications
Size approximately 370 × 264 × 130mm, weight<9kg, working temperature 0-50 ℃, humidity<85%, no condensation
Power supply and interface
220VAC ± 10% power supply, working current 0.5A; RF input is N-type female connector, control interface includes DB15 communication port
Cooling and Certification
Forced air cooling for heat dissipation, in compliance with CE, UL, and semiconductor equipment clean room usage standards
3、 Application scenarios and adaptation systems
1. Core application areas
As a power regulator for plasma technology, this matching device is mainly used in key processes of semiconductor manufacturing:
Plasma etching: a dry etching process suitable for silicon wafers and compound semiconductors, ensuring the uniformity of etching rate and pattern accuracy
Plasma enhanced chemical vapor deposition (PECVD): used for power stability control in thin film deposition process, improving film thickness consistency
Plasma cleaning: providing a stable plasma source during wafer bonding pre-processing to ensure surface cleaning effectiveness
2. Adapt devices and systems
Supporting RF power supply: Compatible with AMAT's own 1500W level RF power supply (such as the 0190 series power supply), and can also be adapted to power supplies of the same power level from brands such as Agilent and Cammed
Host device adaptation: widely used in major semiconductor equipment such as AMAT Centura etching system and Endura deposition platform
Collaborative components: linked with RF power meter and reaction chamber pressure controller to form a closed-loop power control system
AMAT Applied Materials 0190-11570射頻匹配器產(chǎn)品展示

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The content is from Ruichang Mingsheng Automation Equipment Co., LTD
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