AMAT Applied Materials 0090-77082化學(xué)技術(shù)設(shè)備
1.產(chǎn) 品 資 料 介 紹:
- 工藝定位:作為 AMAT 化學(xué)技術(shù)類設(shè)備,大概率聚焦半導(dǎo)體晶圓化學(xué)處理環(huán)節(jié),參考 CMP(化學(xué)機(jī)械平坦化)或 ECD(電化學(xué)沉積)工藝特性,可能用于晶圓表面拋光、金屬沉積或化學(xué)清洗等核心工序
- 適配晶圓規(guī)格:預(yù)計(jì)支持 150mm、200mm 及 300mm 多尺寸晶圓處理,可通過模塊化配置實(shí)現(xiàn)不同尺寸晶圓的快速切換,適配研發(fā)與量產(chǎn)多場景需求
- 化學(xué)兼容性:兼容銅、鎢、氧化物、多晶硅等多種晶圓材料,可適配強(qiáng)酸 / 堿研磨液、電鍍液等化學(xué)試劑,參考 Mirra CMP 系統(tǒng)對多材料的處理能力
- 工藝均勻性:采用多區(qū)域控制模塊(如 CMP 系統(tǒng)的多區(qū)研磨頭),可實(shí)現(xiàn)晶圓中心到邊緣的高精度均勻處理,薄膜厚度或拋光去除率偏差控制在納米級,滿足 3x 納米及更先進(jìn)節(jié)點(diǎn)需求
- 實(shí)時(shí)監(jiān)控能力:可能集成原位端點(diǎn)檢測技術(shù)(如寬帶分光術(shù)、渦流傳感),實(shí)時(shí)追蹤工藝進(jìn)度,避免過處理或欠處理導(dǎo)致的晶圓報(bào)廢,類似 Reflexion LK CMP 的 Window-in-Pad 技術(shù)
- 自動(dòng)化控制:支持全流程可編程控制,可預(yù)設(shè)多套工藝配方,適配銅、鎳、錫等不同金屬或介電質(zhì)的化學(xué)處理需求,配合 “無示教” 自動(dòng)化功能減少停機(jī)調(diào)整時(shí)間
- 防腐結(jié)構(gòu):接觸化學(xué)試劑的腔體及管路采用耐蝕材質(zhì)(如 PTFE、 Hastelloy 合金),參考 CMP 系統(tǒng)對強(qiáng)酸 / 堿試劑的適配設(shè)計(jì),避免化學(xué)腐蝕導(dǎo)致的設(shè)備損耗
- 晶圓保護(hù):可能配備類似 Nokota ECD 系統(tǒng)的 SafeSeal?組件,處理前對晶圓進(jìn)行密封防護(hù),配合處理后清潔、檢查流程,降低化學(xué)污染風(fēng)險(xiǎn),減少晶圓報(bào)廢率
- 維護(hù)便利性:采用模塊化工藝腔室設(shè)計(jì),支持 HotSwap?腔室外操作機(jī)制,可在不中斷生產(chǎn)的情況下更換耗材或維護(hù)組件,提升設(shè)備運(yùn)行效率
- 潔凈與安全設(shè)計(jì):設(shè)備內(nèi)部集成高效排風(fēng)與廢液回收系統(tǒng),避免化學(xué)試劑揮發(fā)污染潔凈車間,同時(shí)配備泄漏檢測裝置,出現(xiàn)試劑滲漏時(shí)自動(dòng)切斷供應(yīng)并報(bào)警
- 耐受能力:工作溫度范圍預(yù)計(jì)達(dá) 0-60℃,適配半導(dǎo)體潔凈車間溫濕度波動(dòng),核心組件可承受 - 45℃至 + 105℃的極端存儲(chǔ)溫度,參考工業(yè)級防腐設(shè)備的環(huán)境適應(yīng)性
- 認(rèn)證標(biāo)準(zhǔn):符合 UL、CE 安全認(rèn)證及 RoHS 環(huán)保要求,化學(xué)試劑存儲(chǔ)與排放符合半導(dǎo)體行業(yè)環(huán)保規(guī)范,適配全球晶圓廠合規(guī)性管控需求
- 吞吐效率:采用多腔室并行設(shè)計(jì)(如 CMP 系統(tǒng)的多拋光盤配置),單批次處理能力提升 30% 以上,配合優(yōu)化的晶圓傳輸邏輯,年有效生產(chǎn)時(shí)間可增加 300 小時(shí)以上
- 功能擴(kuò)展:預(yù)留模塊化接口,可靈活搭載預(yù)清洗腔(如 Siconi 預(yù)清洗技術(shù))、干燥單元(如 Marangoni 效應(yīng)干燥器),適配低溫工藝、厚膜沉積等進(jìn)階需求
AMAT Applied Materials 0090-77082化學(xué)技術(shù)設(shè)備 英文資料:
1. Process adaptation and core functions (0090-77082 chemical technology equipment)
Process positioning: As an AMAT chemical technology equipment, it is likely to focus on the chemical processing of semiconductor wafers, referring to the characteristics of CMP (chemical mechanical planarization) or ECD (electrochemical deposition) processes, and may be used for core processes such as wafer surface polishing, metal deposition, or chemical cleaning
Compatible with wafer specifications: It is expected to support processing of 150mm, 200mm, and 300mm multi size wafers, and can quickly switch between different sizes of wafers through modular configuration, adapting to the needs of research and development and mass production in multiple scenarios
Chemical compatibility: Compatible with various wafer materials such as copper, tungsten, oxide, and polycrystalline silicon, and can adapt to strong acid/alkali grinding solutions, electroplating solutions, and other chemical reagents. Refer to Mirra CMP system's ability to handle multiple materials
2. Performance and Control Accuracy (0090-77082 Chemical Technology Equipment)
Process uniformity: By using multi zone control modules (such as multi zone grinding heads in CMP systems), high-precision uniform processing from the center to the edge of the wafer can be achieved. The deviation of film thickness or polishing removal rate is controlled at the nanometer level, meeting the requirements of 3x nanometer and more advanced nodes
Real time monitoring capability: may integrate in-situ endpoint detection technology (such as broadband spectroscopy, eddy current sensing), track process progress in real time, avoid wafer scrap caused by over or under processing, similar to Reflexion LK CMP's Window in Pad technology
Automation control: supports full process programmable control, can preset multiple process formulas, adapt to the chemical treatment needs of different metals or dielectrics such as copper, nickel, tin, etc., and reduce downtime adjustment time with the "no teaching" automation function
3. Structural design and protective performance (0090-77082 chemical technology equipment)
Anti corrosion structure: The chambers and pipelines that come into contact with chemical reagents are made of corrosion-resistant materials (such as PTFE, Hastelloy alloy), with reference to the CMP system's adaptation design for strong acid/alkali reagents, to avoid equipment loss caused by chemical corrosion
Wafer protection: may be equipped with SafeSeal similar to Nokota ECD system ? Components: Seal and protect the wafer before processing, cooperate with the cleaning and inspection process after processing, reduce the risk of chemical contamination, and decrease the wafer scrap rate
Maintenance convenience: adopting modular process chamber design, supporting HotSwap ? The outdoor operation mechanism of the chamber can replace consumables or maintain components without interrupting production, improving equipment operating efficiency
4. Environment and Compliance (0090-77082 Chemical Technology Equipment)
Cleanliness and safety design: The equipment is equipped with an integrated high-efficiency exhaust and waste liquid recovery system to prevent chemical reagent volatilization from contaminating the clean workshop. It is also equipped with a leak detection device that automatically cuts off the supply and alarms in case of reagent leakage
AMAT Applied Materials 0090-77082化學(xué)技術(shù)設(shè)備 產(chǎn)品展示

產(chǎn)品視頻
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The content is from Ruichang Mingsheng Automation Equipment Co., LTD
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