AMAT Applied Materials 0100-09022探測器板組件
1.產(chǎn) 品 資 料 介 紹:
- 狀態(tài)感知:通過 AI(模擬輸入)功能實時采集反應腔體內(nèi)的壓力波動信號(范圍通常為 1-1000mTorr)與溫度梯度數(shù)據(jù)(精度達 ±0.1℃),捕捉薄膜生長過程中的環(huán)境變化;
- 工藝修正:將數(shù)字控制系統(tǒng)的調(diào)整指令轉(zhuǎn)化為模擬量(如氣體流量閥的開度信號),通過 AO(模擬輸出)功能動態(tài)補償壓力偏差,確保沉積速率穩(wěn)定在 10-500nm/min 的目標區(qū)間,直接影響芯片絕緣層、金屬布線層的厚度均勻性。
- 終點偵測支撐:接收反應室光學傳感器傳輸?shù)墓庑盘柲M量(對應不同材料刻蝕的特征波長),經(jīng)預處理后傳遞至主控制器,為 “刻蝕終點判定算法” 提供原始數(shù)據(jù),避免過度刻蝕導致的硅基底損傷或刻蝕不足引發(fā)的電路短路;
- 速率動態(tài)調(diào)節(jié):根據(jù)刻蝕速率傳感器的反饋信號(通常為 nm/s 級),輸出精準電流信號控制射頻電源功率,使刻蝕速率偏差控制在 ±5% 以內(nèi),適配邏輯芯片、存儲芯片等不同器件的圖形化需求。
AMAT Applied Materials 0100-09022探測器板組件 英文資料:
1、 Core process scenario: the "signal center" of semiconductor front-end manufacturing
As an exclusive adaptation component of the AMAT Precision 5000 series CVD etching machine, its application strictly focuses on the core process of 12 inch wafer front-end manufacturing, and supports process stability through a closed-loop system of "signal acquisition processing output"
1. Precise control of thin film deposition process
In the CVD (Chemical Vapor Deposition) process, components play a dual critical role:
State perception: Real time collection of pressure fluctuation signals (usually ranging from 1-1000 mTorr) and temperature gradient data (with an accuracy of ± 0.1 ℃) inside the reaction chamber through AI (analog input) function, capturing environmental changes during the film growth process;
Process correction: Convert the adjustment instructions of the digital control system into analog quantities (such as the opening signal of the gas flow valve), dynamically compensate for pressure deviation through the AO (Analog Output) function, ensure that the deposition rate is stable within the target range of 10-500nm/min, and directly affect the thickness uniformity of the chip insulation layer and metal wiring layer.
2. End point and rate control of etching process
In the dry etching process, its application depth is closely related to product yield:
Endpoint detection support: Receive the optical signal analog quantity (corresponding to the characteristic wavelength of different materials etched) transmitted by the reaction chamber optical sensor, preprocess it and transmit it to the main controller to provide raw data for the "etching endpoint determination algorithm", avoiding damage to the silicon substrate caused by excessive etching or circuit short circuit caused by insufficient etching;
Dynamic rate adjustment: Based on the feedback signal from the etching rate sensor (usually at the nm/s level), output precise current signals to control the power of the RF power supply, ensuring that the etching rate deviation is controlled within ± 5%, and adapting to the graphic requirements of different devices such as logic chips and storage chips.
AMAT Applied Materials 0100-09022探測器板組件 產(chǎn)品展示

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| 710-327128-005 | 531X100CCHBCG1 | 710-658036-20 |
| 710-327127-006 | 193X804ADG01 | F31X134EPRBNG1 |
| 710-303063-00 | 6DD1684-0EA0 | F31X133PRUAPG1 |
| 710-302407-00 | 03-10484-00 | F31X118CCAACG1 |
| 70-28255-01 | 03-290206-00 | 700-733242-001 |
| 700-661726-00 | 02-00072-00 | 710-450320-00 |
The content is from Ruichang Mingsheng Automation Equipment Co., LTD
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