AMAT Applied Materials  0150-30266雙射頻濾波器模塊

1.產(chǎn) 品 資 料 介 紹：

AMAT Applied Materials  0150-30266雙射頻濾波器模塊  英文資料：

1、 Core positioning and system of the product

The 0150-30266 dual RF filter module is a key purification component in the semiconductor equipment RF signal processing system of Applied Materials Company (AMAT), belonging to the "RF interference suppression and signal optimization" product line. In core processes such as wafer etching and PECVD that rely on dual RF sources (such as source RF and bias RF), RF signals are susceptible to electromagnetic interference (EMI) and cross-talk, leading to plasma instability. As a "signal purifier", this module is specifically designed to adapt to AMAT Centura and Endura series dual RF process equipment. By filtering two independent RF signals in a targeted manner, it suppresses clutter interference and ensures accurate transmission of RF energy to the process chamber. It is the core unit that ensures stable operation of the dual RF system and improves process consistency.

2、 Analysis of core functions and technical characteristics

Considering the strict requirements for signal purity (clutter suppression ratio ≥ 40dB) and power carrying capacity of the semiconductor dual RF system, the core characteristics of this module can be accurately disassembled into the following points:

Dual independent filtering design: integrates two completely independent RF filtering channels, supporting dual band adaptation of 13.56MHz (mainstream etching/deposition RF frequency band) and 27.12MHz (high-frequency auxiliary RF frequency band), and each channel can be individually set with filtering parameters. Adopting LC ladder filtering topology, the passband insertion loss is ≤ 0.5dB (ensuring minimal signal attenuation), and the stopband suppression (for 10kHz-1GHz clutter) is ≥ 45dB, which can effectively filter out harmonic and noise signals generated by the RF power supply and the external environment, ensuring that the two RF signals do not interfere with each other.

High power carrying capacity: The rated power carrying capacity of a single channel is ≥ 500W (peak power ≥ 1500W), using oxygen free copper (OFC) transmission conductors and ceramic dielectric capacitors, with excellent high temperature resistance (working temperature range -20~85 ℃), and can withstand the heat generated by long-term high-power operation of dual RF systems, avoiding filtering performance degradation caused by power overload. It is suitable for typical dual RF power configurations with a source of 300W and a bias of 200W in etching processes.

Accurate impedance matching: Each channel's input/output impedance is strictly matched to 50 Ω (standard impedance of RF system), and the impedance standing wave ratio (VSWR) is ≤ 1.2:1 (within the passband), ensuring that the filtered RF signal has no reflection loss. It forms an efficient signal link with the RF generator (such as AMAT dedicated RF source) and matching device (such as 0190-16177) to avoid power waste and signal distortion caused by impedance mismatch.

 AMAT Applied Materials  0150-30266雙射頻濾波器模塊 產(chǎn)品展示      

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