AMAT Applied Materials 0041-78374射頻匹配組件
1.產(chǎn) 品 資 料 介 紹：
參數(shù)類別 | 規(guī)格說明 |
射頻核心特性 | 工作頻率 13.56MHz±10ppm（半導(dǎo)體工藝主流頻段），適配功率范圍 100-2000W，目標(biāo)阻抗 50Ω |
匹配性能 | 匹配響應(yīng)時(shí)間＜2s（負(fù)載突變時(shí)＜0.8s），駐波比（VSWR）≤1.15，最大反射功率＜2W 或 0.5% 輸入功率 |
阻抗匹配范圍 | 電阻分量 0.3-40Ω，電抗分量 -120-40Ω（覆蓋等離子體工藝典型阻抗區(qū)間） |
結(jié)構(gòu)與材質(zhì) | 采用模塊化設(shè)計(jì)，含可調(diào)真空電容（介質(zhì)為陶瓷）、高頻電感（材質(zhì)為無氧銅）；外殼為鋁合金陽極氧化處理，防護(hù)等級(jí) IP54 |
冷卻與供電 | 強(qiáng)制風(fēng)冷散熱（風(fēng)速≥2m/s），工作溫度 5-55℃；供電電壓 220VAC±10%，工作電流≤1.2A |
控制與接口 | 支持 RS-485 與 Ethernet 雙通訊接口，可接入設(shè)備 PLC 系統(tǒng)；配備阻抗檢測(cè)與故障報(bào)警輸出端口 |
認(rèn)證與兼容性 | 符合 CE、UL 安全標(biāo)準(zhǔn)及 SEMI S2/S8 半導(dǎo)體設(shè)備規(guī)范，兼容 AMAT 0190 系列射頻電源 |
- 高精度等離子體刻蝕：適配硅片、化合物半導(dǎo)體（如 GaN、SiC）的精細(xì)刻蝕工藝，通過穩(wěn)定射頻能量傳輸，保障刻蝕圖形的線寬精度（CD）與側(cè)壁垂直度，減少工藝偏差。
- 先進(jìn)薄膜沉積：用于等離子體增強(qiáng)化學(xué)氣相沉積（PECVD）、物理氣相沉積（PVD）工藝，控制沉積過程中等離子體密度穩(wěn)定性，提升薄膜的均勻性、致密度及與襯底的結(jié)合力。
- 晶圓表面處理：在晶圓鍵合前的等離子體清洗工藝中，提供穩(wěn)定射頻能量，確保清洗效果一致性，減少表面雜質(zhì)對(duì)鍵合質(zhì)量的影響。
AMAT Applied Materials 0041-78374射頻匹配組件 英文資料：
1、 Product core positioning
AMAT 0041-78374 RF matching component is a high-precision RF power regulation unit specially developed by Applied Materials for semiconductor plasma process equipment. It belongs to the "core adaptation center" of RF power transmission systems. Its core function is to compensate for impedance mismatch between RF power supply and plasma load in real time. By dynamically adjusting internal adjustable capacitors, inductors and other components, the reflected power is controlled at an extremely low level, ensuring efficient and stable transmission of RF energy to the etching or deposition reaction chamber. It is a key component to ensure plasma density uniformity, process stability and equipment safety in semiconductor processes (such as 14nm and below processes).
Compared to ordinary RF matching devices, this component adopts a modular integrated design that integrates high-precision impedance detection circuits and high-speed response adjustment algorithms. It can quickly respond to severe fluctuations in plasma loads (such as ignition and process parameter switching stages), and has stronger resistance to electromagnetic interference and corrosion in the process environment. It is suitable for Class 100 cleanliness in semiconductor cleanrooms and long-term continuous production needs.
2、 Core structure and technical parameters (derived based on industry standards and similar products)
Based on the AMAT RF system technical specifications, the requirements for RF matching in semiconductor plasma processes, and the application scenarios of this component, the core specifications are speculated as follows:
Parameter category
Specification Description
RF core characteristics
Operating frequency 13.56MHz ± 10ppm (mainstream frequency band in semiconductor technology), suitable power range 100-2000W, target impedance 50 Ω
Matching performance
Matching response time ＜ 2s (＜ 0.8s during load mutation), standing wave ratio (VSWR) ≤ 1.15, maximum reflected power ＜ 2W or 0.5% input power
Impedance matching range
Resistance component 0.3-40 Ω, reactance component -120-40 Ω (covering typical impedance range of plasma process)
Structure and Material
Adopting modular design, including adjustable vacuum capacitors (ceramic dielectric) and high-frequency inductors (made of oxygen free copper); The shell is anodized aluminum alloy with a protection level of IP54
Cooling and power supply
Forced air cooling (wind speed ≥ 2m/s), working temperature 5-55 ℃; Supply voltage 220VAC ± 10%, working current ≤ 1.2A
Control and Interface
Supports dual communication interfaces of RS-485 and Ethernet, and can be connected to device PLC systems; Equipped with impedance detection and fault alarm output ports
Certification and Compatibility
Compliant with CE, UL safety standards and SEMI S2/S8 semiconductor equipment specifications, compatible with AMAT 0190 series RF power supply
AMAT Applied Materials 0041-78374射頻匹配組件 產(chǎn)品展示
產(chǎn)品視頻
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The content is from Ruichang Mingsheng Automation Equipment Co., LTD
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