AMAT Applied Materials  0190-16177射頻匹配導(dǎo)航器

1.產(chǎn) 品 資 料 介 紹：

AMAT Applied Materials   0190-16177射頻匹配導(dǎo)航器 英文資料：

1、 Core positioning and system of the product

The 0190-16177 RF matching navigator is a key core component in the RF power control system of semiconductor equipment at Applied Materials Corporation (AMAT), and belongs to the "Plasma Process Power Management" product line. In core processes such as wafer etching and thin film deposition that rely on plasma, the energy output by the RF power supply needs to be accurately matched in order to be efficiently transmitted to the process chamber. This navigator serves as a "power matching center" and is specifically adapted to high-end process equipment such as AMAT Centura and Endura. By adjusting impedance matching parameters in real time, it maximizes the utilization of RF energy and controls process stability. It is a core technology unit that ensures plasma density uniformity and improves chip manufacturing yield.

2、 Analysis of core functions and technical characteristics

Based on the strict requirements of semiconductor plasma technology for RF matching and the industry development trend of RF technology, the core characteristics of this navigator can be accurately disassembled into the following points:

Broadband impedance dynamic matching: supports commonly used semiconductor RF frequency bands such as 13.56MHz and 27.12MHz, adapts to load impedance changes in a wide range of 0.1-50 Ω, with a matching speed of ≤ 50 μ s, and can quickly respond to impedance changes in plasma ignition, process switching, and other scenarios, ensuring that the RF energy reflection coefficient (S11 parameter) is ≤ 0.05 (i.e. energy reflectivity ≤ 2.5%), avoiding damage to the RF power source caused by reflected power. The matching principle is based on the built-in adjustable capacitor/inductor network, which adjusts the component parameters in real time through PID closed-loop control algorithm to achieve impedance conjugate matching between the load and the power supply.

Multi dimensional power monitoring and adjustment: Integrated high-precision power sensors (measurement accuracy ± 0.5% FS) can simultaneously monitor key parameters such as incident power (0-3000W), reflected power (0-500W), and standing wave ratio (VSWR); Support linear adjustment of power output, with an adjustment step size of ≤ 1W. It can dynamically adjust the energy transmitted to the plasma according to process requirements (such as etching depth control), and adapt to the power accuracy requirements of advanced processes of 7nm and below.

GaN device integration and high-performance design: Using third-generation semiconductor GaN (gallium nitride) power devices, compared to traditional Si or GaAs devices, it has the advantages of low conduction loss and high power density, which can improve the efficiency of the matching system to over 95%, while significantly reducing the size of the equipment and saving space for compact layout around the process cavity. The high temperature stability of GaN devices (with an upper operating temperature limit of 150 ℃) also enables them to adapt to the harsh thermal environment inside semiconductor devices.

Intelligent collaboration and diagnosis: equipped with EtherNet/IP industrial Ethernet interface, it can seamlessly connect to AMAT equipment main control system and factory MES system, realizing remote configuration of matching parameters and real-time data upload; Built in fault self diagnosis module, capable of automatically identifying capacitor aging, sensor abnormalities, network communication interruptions, etc

 AMAT Applied Materials   0190-16177射頻匹配導(dǎo)航器 產(chǎn)品展示      

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The content is from Ruichang Mingsheng Automation Equipment Co., LTD

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