AMAT Applied Materials 0190-00405驅(qū)動硬盤
1.產(chǎn) 品 資 料 介 紹:
- 高速數(shù)據(jù)讀寫能力:采用企業(yè)級 SSD 存儲架構(gòu)(推測為 NVMe 協(xié)議),連續(xù)讀取速度≥3500MB/s,連續(xù)寫入速度≥3000MB/s,隨機(jī)讀寫 IOPS(4K)分別達(dá) 500K/450K 以上,可快速存儲與調(diào)取半導(dǎo)體設(shè)備的工藝參數(shù)文件(如 CVD 沉積參數(shù)、Etch 刻蝕程序)、實時運行日志(每秒生成 100 + 條數(shù)據(jù)),避免因讀寫延遲導(dǎo)致的設(shè)備卡頓,保障 24 小時連續(xù)制程的順暢運行。
- 大容量與高耐用性:存儲容量推測不低于 1TB,支持最大 4TB 擴(kuò)展,可滿足半導(dǎo)體設(shè)備長期數(shù)據(jù)存儲需求(如保存 6 個月以上的工藝數(shù)據(jù)、設(shè)備維護(hù)記錄);采用 3D TLC/QLC 閃存顆粒,寫入耐久度(TBW)≥600TB,按半導(dǎo)體設(shè)備日均 100GB 數(shù)據(jù)寫入量計算,使用壽命可達(dá) 15 年以上,遠(yuǎn)超普通消費級硬盤,降低設(shè)備運維中的硬盤更換頻率。
- 低延遲與抗掉電保護(hù):內(nèi)置 DRAM 緩存(推測容量≥1GB),可減少數(shù)據(jù)讀寫延遲,確保設(shè)備控制系統(tǒng)調(diào)用工藝程序時響應(yīng)迅速;同時配備超級電容與掉電保護(hù)電路,當(dāng)設(shè)備突發(fā)斷電時,能將緩存中未寫入閃存的數(shù)據(jù)安全保存,避免工藝數(shù)據(jù)丟失或文件損壞,防止因數(shù)據(jù)異常導(dǎo)致的晶圓報廢風(fēng)險。
- 寬溫穩(wěn)定運行特性:工作溫度范圍覆蓋 - 40℃~85℃,能適應(yīng)半導(dǎo)體設(shè)備內(nèi)部的溫度差異 —— 既可在靠近散熱風(fēng)扇的低溫區(qū)域(約 10℃)穩(wěn)定運行,也能耐受靠近加熱腔的高溫區(qū)域(約 60℃),且在溫度劇烈波動時,硬盤讀寫性能衰減率≤3%,無卡頓、死機(jī)現(xiàn)象,保障數(shù)據(jù)存儲連續(xù)性。
- 抗振動與沖擊性能:通過工業(yè)級振動測試(5-500Hz,10g 加速度)與沖擊測試(1500g 峰值加速度,0.5ms 脈沖),能耐受半導(dǎo)體設(shè)備機(jī)械臂運動、晶圓傳輸機(jī)構(gòu)運行產(chǎn)生的振動,以及設(shè)備維護(hù)時的輕微碰撞,避免硬盤磁頭損壞(機(jī)械硬盤)或閃存顆粒脫落(SSD),降低硬件故障風(fēng)險;同時采用無機(jī)械結(jié)構(gòu)的 SSD 設(shè)計(若為機(jī)械硬盤則配備強(qiáng)化抗震磁頭),進(jìn)一步提升抗振動能力。
- 防腐蝕與防塵設(shè)計:外殼采用鋁合金材質(zhì)并噴涂防腐蝕涂層,可抵御潔凈車間中可能存在的微量腐蝕性氣體(如刻蝕工藝中的氟化物、沉積工藝中的硅烷殘留),避免外殼銹蝕或內(nèi)部元器件腐蝕;接口處配備防塵密封圈,符合 IP54 防護(hù)標(biāo)準(zhǔn),防止?jié)崈糗囬g的粉塵進(jìn)入硬盤內(nèi)部,堵塞接口或影響電路連接,保障數(shù)據(jù)傳輸穩(wěn)定。
AMAT Applied Materials 0190-00405驅(qū)動硬盤 英文資料:
1、 High stability storage performance: adapted to the data storage needs of semiconductor devices
As the "data warehouse" of semiconductor equipment, this drive hard disk has high reliability and high-performance storage capabilities as its core, meeting the secure storage and fast call requirements of various data during equipment operation:
High speed data read and write capability: using enterprise grade SSD storage architecture (presumably NVMe protocol), continuous read speed ≥ 3500MB/s, continuous write speed ≥ 3000MB/s, random read and write IOPS (4K) of 500K/450K or more, can quickly store and retrieve process parameter files of semiconductor equipment (such as CVD deposition parameters, Etch etching program), real-time operation logs (generating 100+data per second), avoiding device lag caused by read and write delays, and ensuring smooth operation of 24-hour continuous processes.
Large capacity and high durability: The storage capacity is estimated to be no less than 1TB, supporting a maximum expansion of 4TB, which can meet the long-term data storage needs of semiconductor equipment (such as storing process data and equipment maintenance records for more than 6 months); Using 3D TLC/QLC flash memory particles, the write durability (TBW) is ≥ 600TB. Calculated based on the daily data write volume of 100GB for semiconductor devices, the service life can reach more than 15 years, far exceeding ordinary consumer grade hard drives and reducing the frequency of hard disk replacement in equipment maintenance.
Low latency and power down protection: Built in DRAM cache (estimated capacity ≥ 1GB) can reduce data read and write latency, ensuring fast response when the device control system calls the process program; Simultaneously equipped with supercapacitors and power failure protection circuits, when the device suddenly loses power, it can securely store data in the cache that has not been written to flash memory, avoiding process data loss or file damage, and preventing the risk of wafer scrap caused by data abnormalities.
2、 Strict environmental tolerance: to cope with complex working conditions in semiconductor manufacturing
Based on AMAT's specialized design for the semiconductor industry, this hard drive exhibits excellent environmental adaptability and can withstand harsh conditions in clean workshops and equipment interiors
Wide temperature stable operation characteristics: The working temperature range covers -40 ℃~85 ℃, and can adapt to temperature differences inside semiconductor devices - it can operate stably in low-temperature areas near the cooling fan (about 10 ℃), as well as withstand high-temperature areas near the heating chamber (about 60 ℃), and when the temperature fluctuates violently, the hard disk read and write performance degradation rate is ≤ 3%, without lagging or crashing, ensuring data storage continuity.
Anti vibration and impact performance: Through industrial grade vibration testing (5-500Hz, 10g acceleration) and impact testing (1500g peak acceleration, 0.5ms pulse), it can withstand the vibration generated by the movement of semiconductor equipment robotic arms, wafer transfer mechanisms, and minor collisions during equipment maintenance, avoiding damage to hard disk heads (mechanical hard disks) or detachment of flash memory particles (SSDs), and reducing the risk of hardware failure;
AMAT Applied Materials 0190-00405驅(qū)動硬盤 產(chǎn)品展示

產(chǎn)品視頻
3.其他產(chǎn)品
MLJ1005B010H00C 控制器模塊
MC-4/11/03/400 伺服驅(qū)動器
MOISTURE.IQ-1-6-1-1-1-0-0? 分析儀
4.其他英文產(chǎn)品
WATLOW ANAFAZE CLS216 cable
OMACO GF0-57CQD-002 Touch screen
NI GPIB-140A/2 total line expander
| 710-658669-00 | 8005-MP-24 | 4136J54G4 |
| 710-658363-20 | 8005-LTV-101 | 4136J56-G1 |
| 710-658340-20 | 8005-LTC-101 | 8030-DLM-110 |
| 710-658232-20 | 8005-LNV-101 | 8030-DIM-101 |
| 710-658232-00 | 8005-EPS-51 | 8030-CRM-931 |
| 710-658172-20 | 8005-EPS-50 | 8030-CRM-720 |
The content is from Ruichang Mingsheng Automation Equipment Co., LTD
Contact: +86 15270269218




