AMAT Applied Materials 0190-14783射頻匹配盒

1.產(chǎn) 品 資 料 介 紹：

產(chǎn)品概述

AMAT 0190-14783 射頻匹配盒是 Applied Materials 半導(dǎo)體設(shè)備中用于射頻功率傳輸和阻抗匹配的關(guān)鍵模塊。它用于調(diào)節(jié)射頻電源與工藝腔體之間的阻抗匹配，確保射頻能量高效傳輸至工藝區(qū)域，從而實現(xiàn)等離子體沉積、刻蝕或清洗過程的均勻性和穩(wěn)定性。射頻匹配盒是保證高精度工藝效果和設(shè)備可靠運行的重要組成部分。

技術(shù)參數(shù)（典型特征）

• 類型：射頻匹配盒 / RF Match Box

• 功能：射頻阻抗匹配，優(yōu)化功率傳輸，保護射頻電源

• 工作頻率：通常在幾十 MHz 至幾百 MHz（依工藝要求）

• 最大功率：根據(jù)設(shè)備規(guī)格設(shè)計，可承受高射頻功率輸出

• 接口類型：射頻輸入/輸出接口，與射頻電源及工藝腔體連接

• 控制方式：手動或自動匹配，可與控制器實現(xiàn)閉環(huán)調(diào)節(jié)

• 工作環(huán)境：潔凈室兼容，耐高溫、耐電磁干擾

• 兼容設(shè)備：Applied Materials 各類等離子體沉積（CVD/PVD）、刻蝕（Etch）設(shè)備

應(yīng)用場景

1. 射頻功率傳輸優(yōu)化

   • 調(diào)節(jié)射頻源與工藝腔體的阻抗匹配，減少反射功率，提高能量利用率。

2. 等離子體沉積與刻蝕

   • 確保等離子體均勻穩(wěn)定，提升薄膜沉積均勻性和刻蝕精度。

3. 設(shè)備保護

   • 減少射頻反射對射頻電源的損害，延長設(shè)備壽命。

4. 工藝參數(shù)閉環(huán)控制

   • 與控制器配合，實現(xiàn)自動阻抗匹配，保證工藝重復(fù)性和一致性。

產(chǎn)品優(yōu)勢

• 射頻匹配精確：保證射頻功率高效傳輸，提高工藝一致性。

• 可靠性強：耐高溫、耐電磁干擾，適應(yīng)半導(dǎo)體工藝環(huán)境。

• 模塊化設(shè)計：便于安裝、拆卸和維護，提高設(shè)備可用性。

• 兼容性廣：支持多種 AMAT 等離子體設(shè)備和射頻系統(tǒng)。

• 提升工藝穩(wěn)定性：通過優(yōu)化射頻能量分布，實現(xiàn)薄膜沉積和刻蝕過程穩(wěn)定。

AMAT Applied Materials 0190-14783射頻匹配盒 英文資料：

Product Overview

AMAT 0190-14783 RF Matching Box is a key module used for RF power transmission and impedance matching in Applied Materials semiconductor equipment. It is used to adjust the impedance matching between the RF power supply and the process chamber, ensuring efficient transmission of RF energy to the process area, thereby achieving uniformity and stability in plasma deposition, etching, or cleaning processes. The RF matching box is an important component to ensure high-precision process effects and reliable equipment operation.

Technical parameters (typical features)

Type: RF Match Box/RF Match Box

Function: RF impedance matching, optimizing power transmission, protecting RF power supply

Operating frequency: usually ranging from tens of MHz to hundreds of MHz (depending on process requirements)

Maximum power: Designed according to device specifications, capable of withstanding high RF power output

Interface type: RF input/output interface, connected to RF power supply and process chamber

Control mode: manual or automatic matching, can achieve closed-loop adjustment with the controller

Work environment: cleanroom compatible, high temperature resistant, and resistant to electromagnetic interference

Compatible devices: Various plasma deposition (CVD/PVD) and etching (Etch) equipment from Applied Materials

Application scenarios

RF power transmission optimization

Adjust the impedance matching between the RF source and the process chamber to reduce reflected power and improve energy utilization efficiency.

Plasma deposition and etching

Ensure uniform and stable plasma, improve film deposition uniformity and etching accuracy.

equipment protection

Reduce the damage of RF reflection to RF power supply and extend the lifespan of equipment.

Closed loop control of process parameters

Cooperate with the controller to achieve automatic impedance matching, ensuring process repeatability and consistency.

Product advantages

RF matching accuracy: ensuring efficient transmission of RF power and improving process consistency.

Strong reliability: resistant to high temperatures, electromagnetic interference, and suitable for semiconductor process environments.

Modular design: easy to install, disassemble, and maintain, improving equipment availability.

Wide compatibility: Supports multiple AMAT plasma devices and RF systems.

Improve process stability: By optimizing the distribution of RF energy, achieve stable thin film deposition and etching processes.

AMAT Applied Materials  0190-14783射頻匹配盒 產(chǎn)品展示      

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The content is from Ruichang Mingsheng Automation Equipment Co., LTD

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