AMAT 0041-76691加熱器

1.產(chǎn) 品 資 料 介 紹：

AMAT 0041-76691 加熱器

產(chǎn)品概述

AMAT（Applied Materials）0041-76691 加熱器是應(yīng)用于半導(dǎo)體制造設(shè)備中的專用工藝加熱部件，主要用于控制真空腔體或工藝平臺(tái)的溫度環(huán)境。通過(guò)精確的加熱和溫度穩(wěn)定性管理，該加熱器為沉積、刻蝕、離子注入等工藝提供理想的工藝條件，保障薄膜沉積質(zhì)量與工藝穩(wěn)定性。

技術(shù)參數(shù)（典型方向，具體參數(shù)需參考原廠資料）

• 加熱方式：電阻加熱/陶瓷加熱片形式

• 溫控范圍：支持常溫至數(shù)百攝氏度的穩(wěn)定調(diào)節(jié)

• 精度：具備閉環(huán)溫控機(jī)制，溫度控制精度高

• 兼容性：適配 AMAT PVD、CVD 等平臺(tái)

• 材料特性：耐高溫、抗腐蝕，適應(yīng)真空和反應(yīng)性氣氛環(huán)境

應(yīng)用場(chǎng)景

1. 半導(dǎo)體前道工藝

   • CVD（化學(xué)氣相沉積）：加熱反應(yīng)腔體或晶圓基底，確保薄膜均勻沉積。

   • PVD（物理氣相沉積）：為靶材或腔體提供穩(wěn)定熱源，保證沉積層厚度一致。

   • 刻蝕工藝：在等離子體刻蝕中保持腔體溫度穩(wěn)定，防止殘留物沉積。

2. 離子注入系統(tǒng)

   • 提供離子注入過(guò)程中所需的基板預(yù)熱或工藝恒溫，改善離子植入均勻性。

3. 晶圓處理與清洗

   • 在濕法或干法清洗工藝中，利用加熱實(shí)現(xiàn)化學(xué)反應(yīng)速率提升與清洗效率優(yōu)化。

4. 真空腔體環(huán)境控制

   • 用于維持腔體內(nèi)部恒定溫度，避免冷凝或顆粒污染。

   • 提升真空系統(tǒng)在高溫環(huán)境下的穩(wěn)定性。

5. 研發(fā)與實(shí)驗(yàn)平臺(tái)

   • 應(yīng)用于工藝開(kāi)發(fā)實(shí)驗(yàn)室，進(jìn)行新型材料沉積與工藝窗口探索。

AMAT 0041-76691加熱器  英文資料：

AMAT 0041-76691 Heater

Product Overview

AMAT (Applied Materials) 0041-76691 heater is a specialized process heating component used in semiconductor manufacturing equipment, mainly used to control the temperature environment of vacuum chambers or process platforms. Through precise heating and temperature stability management, this heater provides ideal process conditions for deposition, etching, ion implantation, and other processes, ensuring the quality and stability of thin film deposition.

Technical parameters (typical direction, specific parameters need to refer to the original factory information)

Heating method: resistance heating/ceramic heating plate form

Temperature control range: supports stable adjustment from room temperature to several hundred degrees Celsius

Accuracy: Equipped with a closed-loop temperature control mechanism, high temperature control accuracy

Compatibility: Compatible with AMAT PVD, CVD and other platforms

Material characteristics: high temperature resistance, corrosion resistance, suitable for vacuum and reactive atmosphere environments

Application scenarios

Semiconductor front-end process

CVD (Chemical Vapor Deposition): Heating the reaction chamber or wafer substrate to ensure uniform deposition of thin films.

PVD (Physical Vapor Deposition): Provides a stable heat source for the target material or cavity, ensuring consistent thickness of the deposited layer.

Etching process: Maintain stable chamber temperature during plasma etching to prevent residue deposition.

Ion implantation system

Provide substrate preheating or process constant temperature required during ion implantation to improve ion implantation uniformity.

Wafer processing and cleaning

In wet or dry cleaning processes, heating is used to improve chemical reaction rates and optimize cleaning efficiency.

Vacuum chamber environment control

Used to maintain a constant temperature inside the cavity, avoiding condensation or particle contamination.

Improve the stability of vacuum systems in high-temperature environments.

R&D and experimental platform

Applied to the process development laboratory for exploring new material deposition and process windows.

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The content is from Ruichang Mingsheng Automation Equipment Co., LTD

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